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W947D2HBJX6E

W947D2HBJX6E

  • 厂商:Winbond
  • 包装:--
  • 无铅情况/ROHS: 无铅
  • 描述:This is a 128Mb Low Power DDR SDRAM organized as 1M words x 4 banks x 32bit
  • 封装:90VFBGA
  • 类别:SDRAM
参数 数值
Voltage 1.8V / 1.8V
Package 90VFBGA
Status P
Density 128 Mbit
Organization x32
RoHS Y
Speed Grade 166MHz, -25 to 85C

Description
This is a 128Mb Low Power DDR SDRAM organized as 1M words x 4 banks x 32bits
Features
Power supply VDD = 1.7V~1.95V、VDDQ = 1.7V~1.95V
Data width: x32
Burst Type: Sequential or Interleave、Clock rate : 166MHz, 200MHz
Standard Self Refresh Mode
PASR、ATCSR、Power Down Mode、DPD
Programmable output buffer driver strength
Four internal banks for concurrent operation
CAS Latency: 2 and 3
Burst Length: 2、4 、8 and 16
Operating Temperature Range: Extended (-25°C ~ 85°C), Industrial (-40°C ~ 85°C)
Bidirectional, data strobe (DQS) is transmitted or received with data, to be used in capturing data at the receiver

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